Solid Power-DS-SPS150B12G3M4-S0401G0021 V1.0.
1200V 150A IGBT Half Bridge Module
1200V 150A IGBT
□ 1200V Trench+ Field Stop technology
□ Freewheeling diodes with fast and soft reverse recovery
□ VCE(sat) with positive temperature coefficient
□ Low switching losses
□ Motor/Servo Drives
□ High Power Converters
□ UPS
□ Photovoltaic
Package
| Item | Symbol | Conditions | Values | Unit |
| Isolation test voltage | VISOL | RMS, f = 50 Hz, t =1 min | 4.0 | kV |
| Material of module baseplate | | | Cu | |
| Internal isolation | | (class 1, IEC 61140) Basic insulation (class 1, IEC 61140) | Al2O3 | |
| Creepage distance | dCreep | terminal to heatsink | 17.0 | mm |
| dCreep | terminal to terminal | 20.0 |
| Clearance | dClear | terminal to heatsink | 17.0 | mm |
| dClear | terminal to terminal | 9.5 |
| Comparative tracking index | CTI | | ＞200 | |
| | |
| Item | Symbol | Conditions | Values | Unit |
| Min. | Typ. | Max. |
| Stray inductance module | LsCE | | | 20 | | nH |
| Module lead resistance, terminals - chip | RCC’+EE’ | | TC=25℃ | | 0.65 | | mΩ |
| Storage temperature | Tstg | | -40 | | 125 | ℃ |
| Mounting torque for module mounting | M6 | | 3.0 | | 5.0 | Nm |
| Terminal connection torque | M5 | | 2.5 | | 5.0 | Nm |
| Weight | G | | | 160 | | g |
IGBT
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit |
| Collector-emitter Voltage | VCES | | Tvj=25℃ | 1200 | V |
| Maximum gate-emitter voltage | VGES | | ±20 | V |
| Transient gate-emitter voltage | VGES | tp≤10μs,D=0.01 | ±30 | V |
| Continuous DC collector current | IC | | TC=25℃ | 200 | A |
| TC=100℃ | 150 |
| Pulsed collector current,tp limited by Tjmax | ICpulse | | 300 | A |
| Power dissipation | Ptot | | 600 | W |
Characteristic Values
| Item | Symbol | Conditions | Values | Unit |
| Min. | Typ. | Max. |
| Collector-emitter saturation voltage | VCE(sat) | IC=150A, VGE=15V | Tvj=25℃ | | 1.50 | 1.80 | V |
| Tvj=125℃ | | 1.65 | |
| Tvj=150℃ | | 1.70 | |
| Gate threshold voltage | VGE(th) | VCE=VGE, IC=6mA | 5.0 | 5.8 | 6.5 | V |
| Collector-emitter cut-off current | ICES | VCE=1200V, VGE=0V | Tvj=25℃ | | | 100 | µA |
| Tvj=150℃ | | | 5 | mA |
| Gate-emitter leakage current | IGES | VCE=0V,VGE=±20V, Tvj=25℃ | -200 | | 200 | nA |
| Gate Charge | QG | VCE=600V, IC=150A , VGE=±15V | | 1.8 | | μC |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f =100kHz | | 30.0 | | nF |
| Output Capacitance | Coes | | 0.95 | |
| Reverse Transfer Capacitance | Cres | | 0.27 | |
| Internal gate resistor | RGint | Tvj=25℃ | | 2 | | Ω |
| Turn-on delay time,inductive load | td(on) | VCC=600V,IC=150A RG=3.3Ω, VGE=±15V | Tvj=25℃ | | 128 | | ns |
| Tvj=125℃ | | 140 | | ns |
| Tvj=150℃ | | 140 | | ns |
| Rise Time,inductive load | tr | Tvj=25℃ | | 48 | | ns |
| Tvj=125℃ | | 52 | | ns |
| Tvj=150℃ | | 52 | | ns |
| Turn-off delay time,inductive load | td(off) | VCC=600V,IC=150A RG=3.3Ω, VGE=±15V | Tvj=25℃ | | 396 | | ns |
| Tvj=125℃ | | 448 | | ns |
| Tvj=150℃ | | 460 | | ns |
| Fall time,inductive load | tf | Tvj=25℃ | | 284 | | ns |
| Tvj=125℃ | | 396 | | ns |
| Tvj=150℃ | | 424 | | ns |
| Turn-on energy loss per pulse | Eon | VCC=600V,IC=150A RG=3.3Ω, VGE=±15V | Tvj=25℃ | | 4.9 | | mJ |
| Tvj=125℃ | | 7.6 | | mJ |
| Tvj=150℃ | | 8.3 | | mJ |
| Turn off Energy loss per pulse | Eoff | Tvj=25℃ | | 16.1 | | mJ |
| Tvj=125℃ | | 21.7 | | mJ |
| Tvj=150℃ | | 22.5 | | mJ |
| SC data | ISC | VGE≤15V, VCC=800V | tp≤10µs Tvj=150℃ | | | 650 | A |
| IGBT thermal resistance,junction-case | RthJC | | | | 0.25 | K /W |
| Operating Temperature | TJop | | -40 | | 150 | ℃ |
Diode
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit |
| Repetitive reverse voltage | VRRM | | Tvj=25℃ | 1200 | V |
| Continuous DC forward current | IF | | 150 | A |
| Diode pulsed current,tp limited by TJmax | IFpulse | | 300 |
Characteristic Values
| Item | Symbol | Conditions | Values | Unit |
| Min. | Typ. | Max. |
| Forward voltage | VF | IF=150A , VGE=0V | Tvj=25℃ | | 2.30 | 2.70 | V |
| Tvj=125℃ | | 2.50 | |
| Tvj=150℃ | | 2.50 | |
| Reverse recovery time | trr | IF=150A dIF/dt=-3300A/μs (Tvj=150°C) VR=600V, VGE=-15V | Tvj=25℃ | | 94 | | ns |
| Tvj=125℃ | 117 |
| Tvj=150℃ | 129 |
| Peak reverse recovery current | IRRM | Tvj=25℃ | | 151 | | A |
| Tvj=125℃ | 166 |
| Tvj=150℃ | 170 |
| Reverse recovery charge | QRR | Tvj=25℃ | | 15.6 | | µC |
| Tvj=125℃ | 23.3 |
| Tvj=150℃ | 24.9 |
| Reverse recovery energy loss per pulse | Erec | Tvj=25℃ | | 6.7 | | mJ |
| Tvj=125℃ | 10.9 |
| Tvj=150℃ | 11.9 |
| Diode thermal resistance,junction-case | RthJCD | | | | 0.46 | K /W |
| Operating Temperature | TJop | | -40 | | 150 | ℃ |
Output characteristic(typical) Output characteristic(typical)
IC = f (VCE) IC = f (VCE) Tvj= 150°C
IGBT
Transfer characteristic(typical) Switching losses IGBT (typical)
IC = f (VGE) E = f (RG)
VCE = 20V VGE = ±15V, IC = 150A, VCE = 600V
IGBT RBSOA
Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)
E = f (IC) IC =f (VCE)
VGE = ±15V, RG = 3.3Ω , VCE = 600V VGE = ±15V, Rgoff = 5.1Ω, Tvj = 150°C
Typical capacitance as a function of collector-emitter voltage Gate charge (typical)
C = f (VCE) VGE = f (QG)
f = 100 kHz, VGE = 0V IC = 150A, VCE = 600V
IGBT Forward characteristic of Diode (typical)
IGBT transient thermal impedance as a function of pulse width IF = f (VF)
Switching losses Diode(typical) Switching losses Diode(typical)
Erec = f (RG) Erec = f (IF)
IF = 150A, VCE = 600V RG = 3.3Ω, VCE = 600V
Diode transient thermal impedance as a function of pulse width
Zth(j-c) = f (t)
The "1200V 150A IGBT Half Bridge Module" integrates two IGBTs in a half-bridge configuration. It's suitable for applications requiring moderate to high power, offering precise control over voltage (1200V) and current (150A). Effective cooling is essential for reliable operation, and detailed specifications can be found in the manufacturer's datasheet.
Circuit diagram headline
Package outlines
Dimensions in (mm)
mm
Product Tags:
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150A High Power IGBT Module 34mm DS-SPS150B12G3M4-S0401G0021 V1.0. Images
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